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         ? Semiconductor Components Industries, LLC, 2006 March, 2006 ? Rev. 7 1 Publication Order Number: M1MA151AT1/D M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC?59 package which is designed for low power surface mount applications. Features ? Fast trr, < 3.0 ns ? Low CD, < 2.0 pF ? Pb?Free Packages are Available MAXIMUM RATINGS (TA = 25 °C) Rating Symbol Value Unit Reverse Voltage M1MA151AT1 M1MA152AT1 VR 40 80 Vdc Peak Reverse Voltage M1MA151AT1 M1MA152AT1 VRM 40 80 Vdc Forward Current IF 100 mAdc Peak Forward Current IFM 225 mAdc Peak Forward Surge Current I (Note 1) FSM 500 mAdc THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC http://onsemi.com Preferred devices are recommended choices for future use and best overall value. SC?59 CASE 318D SC?59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V?100 mA SURFACE MOUNT MARKING DIAGRAM 1 ANODE 3 2 CATHODE NO CONNECTION 1 Mx M Mx = Device Code x = A for 151 B for 152 M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |